Datasheet4U Logo Datasheet4U.com

HBC558 - PNP EPITAXIAL PLANAR TRANSISTOR

Download the HBC558 datasheet PDF. This datasheet also covers the HBC558_Hi variant, as both devices belong to the same pnp epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.

Description

The HBC558 is designed for switching and AF amplifier amplification suitable for automatic insertion in thick and thin-film circuits.

Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum Power Dissipation

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HBC558_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HBC558
Manufacturer Hi-Sincerity Mocroelectronics
File Size 45.48 KB
Description PNP EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HBC558 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HBC517 NPN EPITAXIAL PLANAR TRANSISTOR HI-SINCERITY
HBC114ES6R Dual NPN Digital Transistor CYStech Electronics
HBC114TS6R Dual NPN Digital Transistor CYStech Electronics
HBC114YC6 Dual NPN Digital Transistors CYStech Electronics
HBC114YS5 Dual NPN Digital Transistors CYStech Electronics

Other Datasheets by Hi-Sincerity Mocroelectronics

Part Number Description
HBC556 PNP EPITAXIAL PLANAR TRANSISTOR
HBC557 PNP EPITAXIAL PLANAR TRANSISTOR
HBC546 NPN EPITAXIAL PLANAR TRANSISTOR
HBC547 NPN EPITAXIAL PLANAR TRANSISTOR
HBC548 NPN EPITAXIAL PLANAR TRANSISTOR

Full PDF Text Transcription

Click to expand full text
HI-SINCERITY MICROELECTRONICS CORP. HBC558 PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HA200104 Issued Date : 2001.10.01 Revised Date : 2004.07.16 Page No. : 1/4 Description The HBC558 is designed for switching and AF amplifier amplification suitable for automatic insertion in thick and thin-film circuits. Absolute Maximum Ratings TO-92 • Maximum Temperatures Storage Temperature........................................................................................................................... -55 ~ +150 °C Junction Temperature.................................................................................................................................... +150 °C • Maximum Power Dissipation Total Power Dissipation (TA=25°C)....................................................
Published: |