• Part: HBC557
  • Description: PNP EPITAXIAL PLANAR TRANSISTOR
  • Category: Transistor
  • Manufacturer: Hi-Sincerity Mocroelectronics
  • Size: 46.91 KB
Download HBC557 Datasheet PDF
Hi-Sincerity Mocroelectronics
HBC557
Description The HBC557 is designed for use in driver stage of audio amplifier applications. Features - High Breakdown Voltage: 45V - High AC Current Gain: 75-800 at IC=2m A TO-92 Absolute Maximum Ratings - Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum - Maximum Power Dissipation Total Power Dissipation (TA=25°C) 500 m W - Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage...