Datasheet4U Logo Datasheet4U.com

HBC547, HBC547_Hi NPN EPITAXIAL PLANAR TRANSISTOR

HBC547 Description

HI-SINCERITY MICROELECTRONICS CORP.HBC547 NPN EPITAXIAL PLANAR TRANSISTOR Spec.No.: HE6418 Issued Date : 1992.11.25 Revised Date : 2005.02.04 Page.
The HBC547 is designed for use in driver stage of audio amplifier. High Breakdown Voltage: 45V. High DC Current Gain: 110.

HBC547 Features

* High Breakdown Voltage: 45V
* High DC Current Gain: 110-800 at IC=2mA TO-92 Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum
* Maximum Power Dissipation Total Power Dissipation (TA=25°C) 625

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: HBC547, HBC547_Hi. Please refer to the document for exact specifications by model.
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
HBC547, HBC547_Hi
Manufacturer
Hi-Sincerity Mocroelectronics
File Size
50.33 KB
Datasheet
HBC547_Hi-SincerityMocroelectronics.pdf
Description
NPN EPITAXIAL PLANAR TRANSISTOR
Note
This datasheet PDF includes multiple part numbers: HBC547, HBC547_Hi.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

  • HBC517 - NPN EPITAXIAL PLANAR TRANSISTOR (HI-SINCERITY)
  • HBC114ES6R - Dual NPN Digital Transistor (CYStech Electronics)
  • HBC114TS6R - Dual NPN Digital Transistor (CYStech Electronics)
  • HBC114YC6 - Dual NPN Digital Transistors (CYStech Electronics)
  • HBC114YS5 - Dual NPN Digital Transistors (CYStech Electronics)
  • HBC114YS6R - Dual NPN Digital Transistor (CYStech Electronics)
  • HBC123ES6R - Dual NPN Digital Transistor (CYStech Electronics)
  • HBC123JS6R - Dual NPN Digital Transistors (CYStech Electronics)

📌 All Tags

NPN EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics
Hi-Sincerity Mocroelectronics HBC547-like datasheet