HBC546, HBC546_Hi NPN EPITAXIAL PLANAR TRANSISTOR

Hi-Sincerity Mocroelectronics

Description

HI-SINCERITY MICROELECTRONICS CORP.HBC546 NPN EPITAXIAL PLANAR TRANSISTOR Spec.No.: HE6417 Issued Date : 1992.11.25 Revised Date : 2002.02.18 Page.
The HBC546 is primarily intended for use in driver stage of audio amplifiers. High Breakdown Voltage: 65V. High DC Curren.

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HBC546 Datasheet Preview — This datasheet PDF includes multiple part numbers: HBC546, HBC546_Hi. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: HBC546, HBC546_Hi
Manufacturer: Hi-Sincerity Mocroelectronics
File Size: 48.01 KB
Datasheet: HBC546_Hi-SincerityMocroelectronics.pdf
Description: NPN EPITAXIAL PLANAR TRANSISTOR
Note: This datasheet PDF includes multiple part numbers: HBC546, HBC546_Hi.
Please refer to the document for exact specifications by model.

Features

* High Breakdown Voltage: 65V
* High DC Current Gain: 110-800 at IC=2mA, VCE=5V TO-92 Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum
* Maximum Power Dissipation Total Power Dissipation (TA=25°

HBC546 Distributors

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HBC546_Hi NPN EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics

Hi-Sincerity Mocroelectronics HBC546-like datasheet