HBC546 Features
* High Breakdown Voltage: 65V
* High DC Current Gain: 110-800 at IC=2mA, VCE=5V TO-92 Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum
* Maximum Power Dissipation Total Power Dissipation (TA=25°
HBC546_Hi-SincerityMocroelectronics.pdf
Datasheet Details
HBC546, HBC546_Hi
Hi-Sincerity Mocroelectronics
48.01 KB
Npn epitaxial planar transistor.
This datasheet PDF includes multiple part numbers: HBC546, HBC546_Hi.
Please refer to the document for exact specifications by model.
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HBC546 Distributor
