HVV0912-150 Power Transistor

Description

The innovative Semiconductor Company! HVV0912-150 High Voltage, High Ruggedness TM L-Band Avionics Pulsed Power Transistor 960-1215 MHz, 10μs Pulse, 1.
The high power HVV0912-150 device is an enhancement mode RF MOSFET power transistor designed for pulsed applications in the L-Band from 960MHz to 1215.

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Datasheet Specifications

Part number: HVV0912-150
Manufacturer: HVVi
File Size: 761.42 KB
Datasheet: HVV0912-150-HVVi.pdf
Description: Power Transistor

Features

* Silicon MOSFET Technology
* Operation from 24V to 50V
* High Power Gain
* Extreme Ruggedness
* Internal Input and Output Matching
* Excellent Thermal Stability
* All Gold Bonding Scheme TYPICAL PERFORMANCE High voltage vertical technology i

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HVV0912-150 Power Transistor HVVi

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