HVV1012-250 Power Transistor

Description

The innovative Semiconductor Company! HVV1012-250 High Voltage, High Ruggedness TM L-Band Avionics Pulsed Power Transistor 1025-1150 MHz, 10μs Pulse, .
The high power HVV1012-250 device is an enhancement mode RF MOSFET power transistor designed for pulsed applications in the L-Band from 1025MHz to 115.

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Datasheet Specifications

Part number: HVV1012-250
Manufacturer: HVVi
File Size: 629.33 KB
Datasheet: HVV1012-250-HVVi.pdf
Description: Power Transistor

Features

* Silicon MOSFET Technology
* Operation from 24V to 50V
* High Power Gain
* Extreme Ruggedness
* Internal Input and Output Matching
* Excellent Thermal Stability
* All Gold Bonding Scheme TYPICAL PERFORMANCE High voltage vertical technology i

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HVV1012-250 Power Transistor HVVi

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