HVV1012-250 - Power Transistor

HVV1012-250 Datasheet Preview — Preview of HVV1012-250 PDF

Datasheet Details

Part number	HVV1012-250
Manufacturer	HVVi
File Size	629.33 KB
Description	Power Transistor
Datasheet	HVV1012-250-HVVi.pdf

HVV1012-250 Product details

Description

The high power HVV1012-250 device is an enhancement mode RF MOSFET power transistor designed for pulsed applications in the L-Band from 1025MHz to 1150MHz.

Features

Silicon MOSFET Technology.
Operation from 24V to 50V.
High Power Gain.
Extreme Ruggedness.
Internal Input and Output Matching.
Excellent Thermal Stability.
All Gold Bonding Scheme.

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Published: Aug 11, 2016 |