HVV1214-025S RF Transistor

Description

HVV1214-025 L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200µs Pulse, 10% Duty The innovative Semiconductor Company! .
The high power HVV1214-25 device is a high voltage silicon enhancement mode RF transistor designed for L-Band pulsed radar applications operating ove.

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Datasheet Specifications

Part number: HVV1214-025S
Manufacturer: HVVi
File Size: 221.77 KB
Datasheet: HVV1214-025S-HVVi.pdf
Description: RF Transistor

Features

* High Power Gain
* Excellent Ruggedness
* 48V Supply Voltage ABSOLUTE MAXIMUM RATINGS Symbol VDSS VGS IDSX PD2 TS TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation Storage Temperature Junction Temperature Value 105 10 2 116 -65 to +20

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HVV1214-025S Transistor HVVi

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