HVV1011-035 RF transistor

ASI

Description

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The high power HVV1011-035 device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed applications operating at freque.

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Datasheet Specifications

Part number: HVV1011-035
Manufacturer: ASI
File Size: 171.27 KB
Datasheet: HVV1011-035-ASI.pdf
Description: RF transistor

Features

* High Power Gain Excellent Ruggedness 50V Supply Voltage ABSOLUTE MAXIMUM RATINGS Symbol VDSS VGS IDSX PD2 TS TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation Storage Temperature Junction Temperature Value 95 -10, 10 2 116 -65 to +150 200 Unit V V A W °C °C T

HVV1011-035 Distributors

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HVV1011-035 transistor ASI

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