HVV0405-175 Power Transistor

Description

The innovative Semiconductor Company! HVV0405-175 High Voltage, High Ruggedness TM UHF Pulsed Power Transistor 400-500 MHz, 300μs Pulse, 10% Duty Cycl.
The high power HVV0405-175 device is an enhancement mode RF MOSFET power transistor designed for pulsed applications in the UHF-Band from 420MHz to 48.

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Datasheet Specifications

Part number: HVV0405-175
Manufacturer: HVVi
File Size: 729.48 KB
Datasheet: HVV0405-175-HVVi.pdf
Description: Power Transistor

Features

* Silicon MOSFET Technology
* Operation from 24V to 50V
* High Power Gain
* Extreme Ruggedness
* Internal Input Matching
* Excellent Thermal Stability
* All Gold Bonding Scheme TYPICAL PERFORMANCE High voltage vertical technology is well suit

HVV0405-175 Distributors

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HVV0405-175 Power Transistor HVVi

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