HVV1011-300 Power Transistor

Description

The innovative Semiconductor Company! HVV1011-300 High Voltage, High Ruggedness TM L-Band Avionics Pulsed Power Transistor 1030/1090 MHz, 50µs Pulse, .
The high power HVV1011-300 device is an enhancement mode RF MOSFET power transistor designed for pulsed applications in the L-Band from 1030MHz to 109.

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Datasheet Specifications

Part number: HVV1011-300
Manufacturer: HVVi
File Size: 771.10 KB
Datasheet: HVV1011-300-HVVi.pdf
Description: Power Transistor

Features

* Silicon MOSFET Technology
* Operation from 24V to 50V
* High Power Gain
* Extreme Ruggedness
* Internal Input and Output Matching
* Excellent Thermal Stability
* All Gold Bonding Scheme TYPICAL PERFORMANCE High voltage vertical technology i

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HVV1011-300 Power Transistor HVVi

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