HVV1214-100 Power Transistor

Description

The innovative Semiconductor Company! HVV1214-100 High Voltage, High Ruggedness TM L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10.
The high power HVV1214-100 device is an enhancement mode RF MOSFET power transistor designed for pulsed applications in the L-Band from 1200MHz to 140.

📥 Download Datasheet

HVV1214-100 Datasheet Preview — Preview of HVV1214-100 PDF

Datasheet Specifications

Part number: HVV1214-100
Manufacturer: HVVi
File Size: 726.92 KB
Datasheet: HVV1214-100-HVVi.pdf
Description: Power Transistor

Features

* Silicon MOSFET Technology
* Operation from 24V to 50V
* High Power Gain
* Extreme Ruggedness
* Internal Input and Output Matching
* Excellent Thermal Stability
* All Gold Bonding Scheme TYPICAL PERFORMANCE High voltage vertical technology i

HVV1214-100 Distributors

📁 Related Datasheet

HVV1011-035 HVV1012-060

📌 All Tags

HVV1214-100 Power Transistor HVVi

HVVi HVV1214-100-like datasheet