ATF-26836 2-16 GHz General Purpose Gallium Arsenide FET

Description

2 * 16 GHz General Purpose Gallium Arsenide FET Technical Data ATF-26836 .
The ATF-26836 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a cost effective microstrip package.

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Datasheet Specifications

Part number: ATF-26836
Manufacturer: HP
File Size: 41.79 KB
Datasheet: ATF-26836-HP.pdf
Description: 2-16 GHz General Purpose Gallium Arsenide FET

Features

* High Output Power: 18.0␣ dBm Typical P 1dB at 12␣ GHz
* High Gain: 9.0 dB Typical GSS at 12␣ GHz
* Cost Effective Ceramic Microstrip Package

Applications

* and general purpose amplifier applications in the 2-16␣ GHz frequency range. 36 micro-X Package This GaAs FET device has a nominal 0.3 micron gate length with a total gate periphery of 250␣ microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device.

ATF-26836 Distributors

📁 Related Datasheet

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ATF-26836 2-16 GHz General Purpose Gallium Arsenide FET HP

HP ATF-26836-like datasheet