Description
ATF-36077 2 *18 GHz Ultra Low Noise Pseudomorphic HEMT Data Sheet .
AvagoTechnologies'ATF-36077isanultra-low-noisePseudo morphic High Electron Mobility Transistor (PHEMT), packaged in a low parasitic, surface-mountabl.
Features
* PHEMT Technology
* Ultra-Low Noise Figure:
0.5 dB Typical at 12 GHz 0.3 dB Typical at 4 GHz
* High Associated Gain: 12 dB Typical at 12 GHz 17 dB Typical at 4 GHz
* Low Parasitic Ceramic Microstrip Package
* Tape-and-Reel Packing Option Available
Applicati
Applications
* 12 GHz DBS LNB (Low Noise Block)
* 4 GHz TVRO LNB (Low Noise Block)
* Ultra-Sensitive Low Noise Amplifiers
25
20
Ga
1.2
15
360
NOISE FIGURE (dB) ASSOCIATED GAIN (dB)
Pin Configuration
4 SOURCE
1
3
GATE
DRAIN
2 SOURCE
0.8
10
NF[1] 0.4
0
0
4
8
12 16 20
FRE