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ATF-25570 0.5-10 GHz General Purpose Gallium Arsenide FET

ATF-25570 Description

0.5 * 10 GHz General Purpose Gallium Arsenide FET Technical Data ATF-25570 .
The ATF-25570 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a hermetic, high reliabil- ity package.

ATF-25570 Features

* High Output Power: 20.5 dBm Typical P1 dB at 4 GHz
* Low Noise Figure: 1.0 dB Typical at 4 GHz
* High Associated Gain: 14.0 dB Typical at 4 GHz

ATF-25570 Applications

* in the 0.5-10 GHz frequency range. This GaAs FET device has a nominal 0.3 micron gate length using airbridge interconnects between drain fingers. Total gate periphery is 500 microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device. 70 mil Package El

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Datasheet Details

Part number
ATF-25570
Manufacturer
HP
File Size
34.79 KB
Datasheet
ATF-25570-HP.pdf
Description
0.5-10 GHz General Purpose Gallium Arsenide FET

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0.5-10 GHz General Purpose Gallium Arsenide FET HP
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