ATF-21170 0.5-6 GHz Low Noise Gallium Arsenide FET

Description

0.5 *6 GHz Low Noise Gallium Arsenide FET Technical Data ATF-21170 .
The ATF-21170 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a hermetic, high reliability package.

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Datasheet Specifications

Part number: ATF-21170
Manufacturer: HP
File Size: 37.85 KB
Datasheet: ATF-21170-HP.pdf
Description: 0.5-6 GHz Low Noise Gallium Arsenide FET

Features

* Low Noise Figure: 0.9 dB Typical at 4 GHz
* High Associated Gain: 13.0 dB Typical at 4 GHz
* High Output Power: 23.0 dBm Typical P1 dB at 4 GHz

Applications

* in the 0.5-6 GHz frequency range. This GaAs FET device has a nominal 0.3 micron gate length with a total gate periphery of 750 microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device. 70 mil Package Electrical Specifications, TA = 25°C Symbol Par

ATF-21170 Distributors

📁 Related Datasheet

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ATF-21170 0.5-6 GHz Low Noise Gallium Arsenide FET HP

HP ATF-21170-like datasheet