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ATF-25170 0.5-10 GHz Low Noise Gallium Arsenide FET

ATF-25170 Description

0.5 * 10 GHz Low Noise Gallium Arsenide FET Technical Data ATF-25170 .
The ATF-25170 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a hermetic, high reliability package.

ATF-25170 Features

* Low Noise Figure: 0.8 dB Typical at 4 GHz
* High Associated Gain: 14.0 dB Typical at 4 GHz
* High Output Power: 21.0 dBm Typical P1 dB at 4 GHz

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Datasheet Details

Part number
ATF-25170
Manufacturer
HP
File Size
35.11 KB
Datasheet
ATF-25170-HP.pdf
Description
0.5-10 GHz Low Noise Gallium Arsenide FET

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0.5-10 GHz Low Noise Gallium Arsenide FET HP
HP ATF-25170-like datasheet