ATF-25170 0.5-10 GHz Low Noise Gallium Arsenide FET

Description

0.5 * 10 GHz Low Noise Gallium Arsenide FET Technical Data ATF-25170 .
The ATF-25170 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a hermetic, high reliability package.

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Datasheet Specifications

Part number: ATF-25170
Manufacturer: HP
File Size: 35.11 KB
Datasheet: ATF-25170-HP.pdf
Description: 0.5-10 GHz Low Noise Gallium Arsenide FET

Features

* Low Noise Figure: 0.8 dB Typical at 4 GHz
* High Associated Gain: 14.0 dB Typical at 4 GHz
* High Output Power: 21.0 dBm Typical P1 dB at 4 GHz

ATF-25170 Distributors

📁 Related Datasheet

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ATF-25170 0.5-10 GHz Low Noise Gallium Arsenide FET HP

HP ATF-25170-like datasheet