Datasheet4U Logo Datasheet4U.com

ATF-25735 0.5-10 GHz General Purpose Gallium Arsenide FET

ATF-25735 Description

0.5 *10 GHz General Purpose Gallium Arsenide FET Technical Data ATF-25735 .
The ATF-25735 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a cost effective microstrip package.

ATF-25735 Features

* High Output Power: 19.0␣ Bm Typical P 1dB at 4␣ GHz
* High Gain: 12.5␣ dB Typical G 1 dB at 4 GHz
* Low Noise Figure: 1.2 dB Typical at 4 GHz

ATF-25735 Applications

* in the 0.5-10 GHz frequency range. This GaAs FET device has a nominal 0.3 micron gate length using airbridge interconnects between drain fingers. Total gate periphery is 500 microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device. 35 micro-X Package

📥 Download Datasheet

Preview of ATF-25735 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
ATF-25735
Manufacturer
HP
File Size
41.33 KB
Datasheet
ATF-25735-HP.pdf
Description
0.5-10 GHz General Purpose Gallium Arsenide FET

📁 Related Datasheet

  • ATF-21186 - 0.5-6 GHz General Purpose Gallium Arsenide FET (Agilent)
  • ATF-10136 - 0.5-12 GHz Low Noise Gallium Arsenide FET (Agilent)
  • ATF-13284 - 1-16 Ghz Low Noise Gallium Arsenide FET (Agilent Technologies)
  • ATF-33143 - Low Noise Pseudomorphic HEMT (AVAGO)
  • ATF-331M4 - Low Noise Pseudomorphic HEMT (Agilent)
  • ATF-34143 - Low Noise Pseudomorphic HEMT (AVAGO)
  • ATF-35143 - Low Noise Pseudomorphic HEMT (AVAGO)
  • ATF-36077 - Ultra Low Noise Pseudomorphic HEMT (AVAGO)

📌 All Tags

0.5-10 GHz General Purpose Gallium Arsenide FET HP
HP ATF-25735-like datasheet