ATF-25735 0.5-10 GHz General Purpose Gallium Arsenide FET

Description

0.5 *10 GHz General Purpose Gallium Arsenide FET Technical Data ATF-25735 .
The ATF-25735 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a cost effective microstrip package.

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Datasheet Specifications

Part number: ATF-25735
Manufacturer: HP
File Size: 41.33 KB
Datasheet: ATF-25735-HP.pdf
Description: 0.5-10 GHz General Purpose Gallium Arsenide FET

Features

* High Output Power: 19.0␣ Bm Typical P 1dB at 4␣ GHz
* High Gain: 12.5␣ dB Typical G 1 dB at 4 GHz
* Low Noise Figure: 1.2 dB Typical at 4 GHz

Applications

* in the 0.5-10 GHz frequency range. This GaAs FET device has a nominal 0.3 micron gate length using airbridge interconnects between drain fingers. Total gate periphery is 500 microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device. 35 micro-X Package

ATF-25735 Distributors

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ATF-25735 0.5-10 GHz General Purpose Gallium Arsenide FET HP

HP ATF-25735-like datasheet