4N60I N-Channel MOSFET

HAOHAI

Description

4A, 600V, N【】 FQU4N60 FQD4N60 H H4N60I H4N60S 4N60 HAOHAI N-Channel Power Field Effect Transistoe　 SGS, RoHS TO-251 TO-252 IS TO-251 TO.
　　This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently.

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Datasheet Specifications

Part number: 4N60I
Manufacturer: HAOHAI
File Size: 355.36 KB
Datasheet: 4N60I-HAOHAI.pdf
Description: N-Channel MOSFET

Features

* Higher Current Rating
* Lower RDS(on)
* Lower Capacitances
* Lower Total Gate Charge
* Tighter VSD Specifications
* Avalanche Energy

4N60I Distributors

📁 Related Datasheet

4N60 4N60-C 4N60-CB 4N60-E 4N60-N 4N60-Q

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4N60I N-Channel MOSFET HAOHAI

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