Datasheet4U Logo Datasheet4U.com

4N60-E - N-CHANNEL POWER MOSFET

Datasheet Summary

Description

The UTC 4N60-E is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.

Features

  • S.
  • RDS(ON) < 2.5Ω @ VGS = 10 V, ID = 2.2A.
  • Fast Switching Capability.
  • Avalanche Energy Specified.
  • Improved dv/dt Capability, high Ruggedness.
  • SYMBOL Power MOSFET www. unisonic. com. tw Copyright © 2017 Unisonic Technologies Co. , Ltd 1 of 7 QW-R502-970.D 4N60-E Power MOSFET.

📥 Download Datasheet

Datasheet preview – 4N60-E

Datasheet Details

Part number 4N60-E
Manufacturer Unisonic Technologies
File Size 265.50 KB
Description N-CHANNEL POWER MOSFET
Datasheet download datasheet 4N60-E Datasheet
Additional preview pages of the 4N60-E datasheet.

📁 Similar Datasheet

  • 4N60-CB - N-CHANNEL MOSFET (UTC)
  • 4N60-Q - N-CHANNEL POWER MOSFET (UTC)
  • 4N60-TA5 - 600V N-CHANNEL POWER MOSFET (UTC)
  • 4N60 - 4A 600V N-channel Enhancement Mode Power MOSFET (ROUM)
  • 4N60 - Power MOSFET (Zibo Seno)
  • 4N60 - N-CHANNEL MOSFET (KIA)
  • 4N60 - N-CHANNEL POWER MOSFET (UTC)
  • 4N60 - N-Channel Power MOSFET (nELL)
  • 4N60 - Surface Mount N-Channel Power MOSFET (WEITRON)
  • 4N60 - N-Channel Mosfet Transistor (INCHANGE)
Other Datasheets by Unisonic Technologies
  • 4N60-C - N-CHANNEL POWER MOSFET
  • 4N60-N - N-CHANNEL POWER MOSFET
  • 4N60-R - N-CHANNEL POWER MOSFET
  • 4N60-S - N-CHANNEL POWER MOSFET
  • 4N60K - 40A 600V N-CHANNEL POWER MOSFET
  • 4N60K-MK - N-CHANNEL POWER MOSFET
  • 4N60K-MT - N-CHANNEL POWER MOSFET
  • 4N60Z - 40A 600V N-CHANNEL POWER MOSFET

Full PDF Text Transcription

Click to expand full text
UNISONIC TECHNOLOGIES CO., LTD 4N60-E 4A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N60-E is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.  FEATURES * RDS(ON) < 2.5Ω @ VGS = 10 V, ID = 2.2A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, high Ruggedness  SYMBOL Power MOSFET www.unisonic.com.tw Copyright © 2017 Unisonic Technologies Co., Ltd 1 of 7 QW-R502-970.
Published: |