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4N60 - N-CHANNEL MOSFET

Description

The KIA4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.

Features

  • 600V, RDS(ON) =2.1Ω@ VGS=10V.
  • Ultra low gate charge (typ Qg=15.5nC).
  • Low Reverse capacitance (typ Crss=8pF).
  • 100% avalanche tested.
  • RoHS compliant 3. Pin configuration Pin Function 1 Gate 2 Drain 3 Source 1 of 7 KIA.

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Datasheet preview – 4N60

Datasheet Details

Part number 4N60
Manufacturer KIA
File Size 351.26 KB
Description N-CHANNEL MOSFET
Datasheet download datasheet 4N60 Datasheet
Additional preview pages of the 4N60 datasheet.

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Full PDF Text Transcription

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KIA SEMICONDUCTORS 600V N-CHANNEL MOSFET 4N60 1.Description The KIA4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. 2. Features „ 600V, RDS(ON) =2.1Ω@ VGS=10V „ Ultra low gate charge (typ Qg=15.5nC) „ Low Reverse capacitance (typ Crss=8pF) „ 100% avalanche tested „ RoHS compliant 3. Pin configuration Pin Function 1 Gate 2 Drain 3 Source 1 of 7 KIA SEMICONDUCTORS 600V N-CHANNEL MOSFET 4N60 4.
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