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4N60 - N-Channel Power MOSFET

Description

The Nell 4N60 is a three-terminal silicon device with current conduction capability of 4A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max.

threshold voltage of 4 volts.

Features

  • RDS(ON) = 2.5Ω@VGS = 10V Ultra low gate charge(20nC max. ) Low reverse transfer capacitance (CRSS = 8pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D G DS TO-251 (I-PAK) (4N60F) D D G S TO-252 (D-PAK) (4N60G) GDS TO-220AB (4N60A) GDS TO-220F (4N60AF).

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Full PDF Text Transcription

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SEMICONDUCTOR 4N60 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET (4A, 600Volts) DESCRIPTION The Nell 4N60 is a three-terminal silicon device with current conduction capability of 4A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max. threshold voltage of 4 volts. They are designed for use in applications such as switched mode power supplies, DC to DC converters, PWM motor controls, bridge circuits and general purpose switching applications. FEATURES RDS(ON) = 2.5Ω@VGS = 10V Ultra low gate charge(20nC max.
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