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4N60-C - N-CHANNEL POWER MOSFET

Datasheet Summary

Description

The UTC 4N60-C is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.

Features

  • S.
  • RDS(ON) < 2.5Ω @VGS = 10 V.
  • Fast Switching Capability.
  • Avalanche Energy Specified.
  • Improved dv/dt Capability, high Ruggedness 1 TO-252.
  • SYMBOL.

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Datasheet preview – 4N60-C

Datasheet Details

Part number 4N60-C
Manufacturer Unisonic Technologies
File Size 255.72 KB
Description N-CHANNEL POWER MOSFET
Datasheet download datasheet 4N60-C Datasheet
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Full PDF Text Transcription

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UNISONIC TECHNOLOGIES CO., LTD 4N60-C Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET 11  DESCRIPTION The UTC 4N60-C is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. TO-220F TO-220F1 11 TO-220F2 TO-251  FEATURES * RDS(ON) < 2.
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