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4N60-Q - N-CHANNEL POWER MOSFET

Datasheet Summary

Description

The UTC 4N60-Q is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.

Features

  • S.
  • RDS(ON) < 2.5Ω @ VGS = 10 V, ID = 2.2A.
  • Fast Switching Capability.
  • Avalanche Energy Specified.
  • Improved dv/dt Capability, high RuggednessA.
  • SYMBOL Power MOSFET www. unisonic. com. tw Copyright © 2018 Unisonic Technologies Co. , Ltd 1 of 9 QW-R502-972.F 4N60-Q Power MOSFET.

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Datasheet Details

Part number 4N60-Q
Manufacturer UTC
File Size 469.50 KB
Description N-CHANNEL POWER MOSFET
Datasheet download datasheet 4N60-Q Datasheet
Additional preview pages of the 4N60-Q datasheet.

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Full PDF Text Transcription

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UNISONIC TECHNOLOGIES CO., LTD 4N60-Q 4A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N60-Q is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.  FEATURES * RDS(ON) < 2.5Ω @ VGS = 10 V, ID = 2.2A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, high RuggednessA  SYMBOL Power MOSFET www.unisonic.com.tw Copyright © 2018 Unisonic Technologies Co., Ltd 1 of 9 QW-R502-972.
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