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4N60-CB - N-CHANNEL MOSFET

Datasheet Summary

Description

The UTC 4N60-CB is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.

Features

  • S.
  • RDS(ON) < 2.2Ω @ VGS = 10 V, ID = 2.0A.
  • Fast Switching Capability.
  • Avalanche Energy Specified.
  • Improved dv/dt Capability, high Ruggedness.
  • SYMBOL Power MOSFET.

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Datasheet preview – 4N60-CB

Datasheet Details

Part number 4N60-CB
Manufacturer UTC
File Size 224.26 KB
Description N-CHANNEL MOSFET
Datasheet download datasheet 4N60-CB Datasheet
Additional preview pages of the 4N60-CB datasheet.

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Full PDF Text Transcription

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UNISONIC TECHNOLOGIES CO., LTD 4N60-CB 4.0A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N60-CB is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.  FEATURES * RDS(ON) < 2.2Ω @ VGS = 10 V, ID = 2.
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