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4N60-N - N-CHANNEL POWER MOSFET

Datasheet Summary

Description

The UTC 4N60-N is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.

Features

  • S.
  • RDS(ON) ≤ 2.5 Ω @ VGS=10V, ID=2.2A.
  • Fast Switching Capability.
  • Avalanche Energy Specified.
  • Improved dv/dt Capability, high RuggednessA Power MOSFET.
  • SYMBOL www. unisonic. com. tw Copyright © 2021 Unisonic Technologies Co. , Ltd 1 of 8 QW-R502-971.D 4N60-N Power MOSFET.

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Datasheet Details

Part number 4N60-N
Manufacturer Unisonic Technologies
File Size 255.55 KB
Description N-CHANNEL POWER MOSFET
Datasheet download datasheet 4N60-N Datasheet
Additional preview pages of the 4N60-N datasheet.

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Full PDF Text Transcription

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UNISONIC TECHNOLOGIES CO., LTD 4N60-N 4.0A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N60-N is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient AC to DC converters and bridge circuits.  FEATURES * RDS(ON) ≤ 2.5 Ω @ VGS=10V, ID=2.2A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, high RuggednessA Power MOSFET  SYMBOL www.unisonic.com.tw Copyright © 2021 Unisonic Technologies Co., Ltd 1 of 8 QW-R502-971.
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