GT120N10 - MOSFET

GT120N10 Description

GOFORD .
The GT120N10 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

GT120N10 Features

* VDSS @R10DVS(T(OyNp)) ID 100V 3.7mΩ 120A
* Excellent gate charge x RDS(on) product
* Very low on-resistance RDS(on)
* 175 °C operating temperature
* RoHS Compliant

📥 Download Datasheet

GT120N10 Datasheet Preview — Preview of GT120N10 PDF

Datasheet Details

Part number: GT120N10
Manufacturer: GOFORD
File Size: 2.00 MB
Datasheet: GT120N10-GOFORD.pdf
Description: MOSFET

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GT120N10 Stock/Price