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GT105N10T - N-Channel Enhancement Mode Power MOSFET

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Datasheet Details

Part number	GT105N10T
Manufacturer	GOFORD
File Size	1.00 MB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	GT105N10T-GOFORD.pdf

GT105N10T Product details

Description

The GT105N10T uses advanced trench technology to provide excellent RDS(ON) , low gate charge.It can be used in a wide variety of applications.General

Features

l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 100V 55A < 10.5mΩ < 15mΩ l 100% Avalanche Tested l RoHS Compliant Schematic diagram.

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Published: Nov 14, 2024 |