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GT100DA120U Insulated Gate Bipolar Transistor

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Description

www.DataSheet.co.kr GT100DA120U Vishay Semiconductors Insulated Gate Bipolar Transistor (Trench IGBT), 100 A .

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Features

* Trench IGBT technology temperature coefficient
* Square RBSOA
* 10 μs short circuit capability
* HEXFRED® antiparallel diodes with ultrasoft reverse recovery SOT-227 with positive
* TJ maximum = 150 °C
* Fully isolated package
* Very low i

GT100DA120U Distributors

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GT100DA120U Insulated Gate Bipolar Transistor Vishay Siliconix
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