Datasheet4U Logo Datasheet4U.com

GT100DA120U Insulated Gate Bipolar Transistor

GT100DA120U Description

www.DataSheet.co.kr GT100DA120U Vishay Semiconductors Insulated Gate Bipolar Transistor (Trench IGBT), 100 A .

GT100DA120U Features

* Trench IGBT technology temperature coefficient
* Square RBSOA
* 10 μs short circuit capability
* HEXFRED® antiparallel diodes with ultrasoft reverse recovery SOT-227 with positive
* TJ maximum = 150 °C
* Fully isolated package
* Very low i

📥 Download Datasheet

Preview of GT100DA120U PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • GT1003B - MOSFET (GOFORD)
  • GT100PI120T6H-T4M - IGBT (NJSME)
  • GT10 - Programmable Display (NAiS)
  • GT101 - PCB to Wire Connector (ANN REN)
  • GT105N10 - N-Channel Enhancement Mode Power MOSFET (GOFORD)
  • GT105N10F - N-Channel Enhancement Mode Power MOSFET (GOFORD)
  • GT105N10K - N-Channel Enhancement Mode Power MOSFET (GOFORD)
  • GT105N10T - N-Channel Enhancement Mode Power MOSFET (GOFORD)

📌 All Tags

Insulated Gate Bipolar Transistor Vishay Siliconix
Vishay Siliconix GT100DA120U-like datasheet