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GT100DA60U Insulated Gate Bipolar Transistor

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Description

www.DataSheet.co.kr GT100DA60U Vishay Semiconductors Insulated Gate Bipolar Transistor (Trench IGBT), 100 A .

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Features

* Trench IGBT technology temperature coefficient
* Square RBSOA
* 3 μs short circuit capability
* FRED Pt® antiparallel diodes with ultrasoft reverse recovery SOT-227 with positive
* TJ maximum = 175 °C
* Fully isolated package
* Very low in

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