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GT105N10F - N-Channel Enhancement Mode Power MOSFET

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Datasheet Details

Part number	GT105N10F
Manufacturer	GOFORD
File Size	673.18 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	GT105N10F-GOFORD.pdf

GT105N10F Product details

Description

The GT105N10F uses advanced trench technology to provide excellent RDS(ON) , low gate charge.It can be used in a wide variety of applications.General

Features

l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) l 100% Avalanche Tested l RoHS Compliant 100V 25A < 10.5mΩ < 15mΩ Schematic diagram.

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Published: Nov 13, 2024 |