GT1003B MOSFET

GT1003B Description

GOFORD GT1003B .
The GT1003B uses advanced trench technology and design to provide excellent RDS(ON), low gate charge.

GT1003B Features

* @ 10V (Typ) 100V 115mΩ 7A
* High density cell design for ultra low Rdson
* Lead free product is acquired
* Excellent package for good heat dissipation

📥 Download Datasheet

GT1003B Datasheet Preview — Preview of GT1003B PDF

Datasheet Details

Part number: GT1003B
Manufacturer: GOFORD
File Size: 641.35 KB
Datasheet: GT1003B-GOFORD.pdf
Description: MOSFET

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