G60N06, G60N06T N-Channel Enhancement Mode Power MOSFET

Description

G60N06T N-Channel Enhancement Mode Power MOSFET .
The G60N06T uses advanced trench technology to provide excellent RDS(ON) , low gate charge.

Datasheet Specifications

Part number: G60N06, G60N06T
Manufacturer: GOFORD
File Size: 773.76 KB
Datasheet: G60N06T-GOFORD.pdf
Description: N-Channel Enhancement Mode Power MOSFET
Note: This datasheet PDF includes multiple part numbers: G60N06, G60N06T.
Please refer to the document for exact specifications by model.

Features

* VDS
* ID (at VGS = 10V)
* RDS(ON) (at VGS = 10V)
* RDS(ON) (at VGS = 4.5V)
* 100% Avalanche Tested

G60N06 Distributors

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