Datasheet4U Logo Datasheet4U.com

G60N100BNTD - NPT IGBT

G60N100BNTD Description

FGL60N100BNTD * 1000 V, 60 A NPT Trench IGBT FGL60N100BNTD 1000 V, 60 A NPT Trench IGBT .
Using Fairchild's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, hig.

G60N100BNTD Features

* High Speed Switching
* Low Saturation Voltage: VCE(sat) = 2.5 V @ IC = 60 A
* High Input Impedance

📥 Download Datasheet

Preview of G60N100BNTD PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • G60N100CE - TSG60N100CE (Taiwan Semiconductor)
  • G60N10 - N-Channel Enhancement Mode Power MOSFET (GOFORD)
  • G60N10T - N-Channel Enhancement Mode Power MOSFET (GOFORD)
  • G60N04 - MOSFET (GOFORD)
  • G60N04D52 - Dual N-Channel Enhancement Mode Power MOSFET (GOFORD)
  • G60N04K - N-Channel Enhancement Mode Power MOSFET (GOFORD)
  • G60N06 - N-Channel Enhancement Mode Power MOSFET (GOFORD)
  • G60N06T - N-Channel Enhancement Mode Power MOSFET (GOFORD)

📌 All Tags

Fairchild Semiconductor G60N100BNTD-like datasheet

G60N100BNTD Stock/Price