Datasheet4U.com

G60N04D52 - Dual N-Channel Enhancement Mode Power MOSFET

📥 Download Datasheet

G60N04D52 Datasheet Preview — Preview of G60N04D52 PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	G60N04D52
Manufacturer	GOFORD
File Size	827.86 KB
Description	Dual N-Channel Enhancement Mode Power MOSFET
Datasheet	G60N04D52-GOFORD.pdf

G60N04D52 Product details

Description

The G60N04D52 uses advanced trench technology to provide excellent RDS(ON) , low gate charge.It can be used in a wide variety of applications.General

Features

VDS.
ID (at VGS = 10V).
RDS(ON) (at VGS = 10V).
RDS(ON) (at VGS = 4.5V).
100% Avalanche Tested.
RoHS Compliant 40V 35A < 9mΩ < 12mΩ.

📁 G60N04D52 Similar Datasheet

G60N100 - NPT IGBT (Fairchild Semiconductor)
G60N100BNTD - NPT IGBT (Fairchild Semiconductor)
G60N100CE - TSG60N100CE (Taiwan Semiconductor)
G601 - Manual Reset IC (Global Mixed-mode Technology)
G60T120 - IGBT (Infineon)
G60V60DF - Trench gate field-stop IGBT (STMicroelectronics)

Other Datasheets by GOFORD

G60N04 - MOSFET
G60N04K - N-Channel Enhancement Mode Power MOSFET
G60N06 - N-Channel Enhancement Mode Power MOSFET
G60N06T - N-Channel Enhancement Mode Power MOSFET
G60N10 - N-Channel Enhancement Mode Power MOSFET
G60N10T - N-Channel Enhancement Mode Power MOSFET

Published: Nov 21, 2024 |