G60V60DF Datasheet - STMicroelectronics

G60V60DF Trench gate field-stop IGBT

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the V series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore,.

G60V60DF Features

* Maximum junction temperature: TJ = 175 °C

* Tail-less switching off

* VCE(sat) = 1.85 V (typ.) @ IC = 60 A

* Tight parameter distribution

* Safe paralleling

* Low thermal resistance

* Very fast soft recovery antiparallel diode 3 2 1 TO-3P Fi

G60V60DF-STMicroelectronics.pdf