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G60N04 - MOSFET

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Datasheet Details

Part number	G60N04
Manufacturer	GOFORD
File Size	1.29 MB
Description	MOSFET
Datasheet	G60N04-GOFORD.pdf

G60N04 Product details

Description

The G60N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

VDSS RDS(ON) RDS(ON) ID @4.5V (Typ) @ 10V (Typ) 45V 11 mΩ 9.7 mΩ 60A.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation.
Special process technology for high ESD capability.

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Published: Nov 14, 2024 |