Datasheet Details
Part number:
IGT4E11, IGT4D11
Manufacturer:
GE
File Size:
298.11 KB
Description:
Insulated gate bipolar transistor.
Note:
This datasheet PDF includes multiple part numbers: IGT4E11, IGT4D11.
Please refer to the document for exact specifications by model.
IGT4E11, IGT4D11, Insulated Gate Bipolar Transistor
mTMlJ~~~~ Insulated Gate Bipolar Transistor IGT4D11~E11 10 AMPERES 400, 500 VOLTS EQUIV.
ROS(ON} = 0.27 il This IGT'M Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and bipolar transistors.
The result is a device that has the high input impedance of MOSFETS and the low on-state conduction losses similar to bipolartransistors.
The device design and gate characteristics of the IGT'M Transi
IGT4E11 Features
* Low VCE(SAT) - 2.5V typ @ 10A
* Ultra-fast turn-on - 100 ns typical
* Polysilicon MOS gate - Voltage controlled turn on/off
* High current handling - 10 amps @ 100°C N-CHANNEL c o~ E DIMENSIONS ARE IN INCHES AND (MILLIMETERS) -.
* . :~~g::~;~ .05511.391
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