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IGT4D11 - Insulated Gate Bipolar Transistor

GE

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Datasheet Details

Part number	IGT4D11
Manufacturer	GE
File Size	298.11 KB
Description	Insulated Gate Bipolar Transistor
Datasheet	IGT4D11-GE.pdf

IGT4D11 Product details

Features

Low VCE(SAT) - 2.5V typ @ 10A.
Ultra-fast turn-on - 100 ns typical.
Polysilicon MOS gate - Voltage controlled turn on/off.
High current handling - 10 amps @ 100°C N-.

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Published: Feb 11, 2019 |