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IGT4D10 - Insulated Gate Bipolar Transistor

GE

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Datasheet Details

Part number	IGT4D10
Manufacturer	GE
File Size	308.85 KB
Description	Insulated Gate Bipolar Transistor
Datasheet	IGT4D10-GE.pdf

IGT4D10 Product details

Features

Low VCE(SAT) - 2.5V typ @ 10A.
Ultra-fast turn-on -150 ns typical.
Polysilicon MOS gate - Voltage controlled turn on/off.
High current handling -10 amps @ 100°C N-CHANNEl c . ~ CASE STYLE TO-220AB.

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Published: Feb 11, 2019 |