MRF6S24140HR3 Datasheet (Freescale Semiconductor) - RF Power Field Effect Transistors

MRF6S24140HR3, RF Power Field Effect Transistors

47 Ω, 100 MHz Short Ferrite Beads, Surface Mount 5.6 pF Chip Capacitors 0.01 μF, 100 V Chip Capacitors 2.2 μF, 50 V Chip Capacitors 22 μF, 25 V Tantalum Capacitors 47 μF, 16 V Tantalum Capacitors 10 μF, 50 V Chip Capacitors 220 μF, 50 V Electrolytic Capacitors 240 Ω, 1/4 W Chip Resistor Part Number

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF6S24140H Rev.

0, 3/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for large - signal output applications at 2450 MHz.

Device is suitable for use in industrial, medical and scientific applications.

Typical CW Performance at 2450 MHz, VDD = 28 Volts, IDQ = 1200 mA, Pout = 140 Watts Power Gain 13.2 dB Drain Efficiency 45%

MRF6S24140HR3 Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters

* Internally Matched for Ease of Use

* Qualified Up to a Maximum of 32 VDD Operation

* Integrated ESD Protection

* RoHS Compliant

* In Tape and Reel. R3 Suffix = 250 Units per 5