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MRF6S20010GNR1 - RF Power Field Effect Transistors

Download the MRF6S20010GNR1 datasheet PDF. This datasheet also covers the MRF6S20010NR1 variant, as both devices belong to the same rf power field effect transistors family and are provided as variant models within a single manufacturer datasheet.

Description

100 nF Chip Capacitor (1206) 4.7 pF 600B Chip Capacitors 9.1 pF 600B Chip Capacitors 10 μF, 50 V Chip Capacitors 10 μF, 35 V Tantalum Chip Capacitor 1 kΩ Chip Resistor (1206) 10 kΩ Chip Resistor (1206) 10 Ω Chip Resistor (1206) Part Number CDR33BX104AKWS 600B4R7CW 600B9R1CW GRM55DR61H106KA88B T490D1

Features

  • Characterized with Series Equivalent Large - Signal Impedance Parameters.
  • Internally Matched for Ease of Use.
  • Qualified Up to a Maximum of 32 VDD Operation.
  • Integrated ESD Protection.
  • 200°C Capable Plastic Package.
  • RoHS Compliant.
  • In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. MRF6S20010NR1 MRF6S20010GNR1 1600 - 2200 MHz, 10 W, 28 V GSM/GSM EDGE SINGLE N - CDMA 2 x W - CDMA.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRF6S20010NR1_FreescaleSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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MRF6S9060NBR1 RF Power Field Effect Transistors NXP

Other Datasheets by Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
MRF6S20010NR1 RF Power Field Effect Transistors
MRF6S21050LR3 RF Power Field Effect Transistors
MRF6S21050LSR3 RF Power Field Effect Transistors
MRF6S21060NBR1 RF Power Field Effect Transistors
MRF6S21060NR1 RF Power Field Effect Transistors

Full PDF Text Transcription

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www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF6S20010N Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB general purpose applications with frequencies from 1600 to 2200 MHz. Suitable for analog and digital modulation and multipurpose amplifier applications. • Typical Two - Tone Performance @ 2170 MHz: VDD = 28 Volts, IDQ = 130 mA, Pout = 10 Watts PEP Power Gain — 15.5 dB Drain Efficiency — 36% IMD — - 34 dBc • Typical 2 - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 130 mA, Pout = 1 Watt Avg., Full Frequency Band (2130 - 2170 MHz), Channel Bandwidth = 3.84 MHz. PAR = 8.5 dB @ 0.01% Probability Power Gain — 15.
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