Datasheet Details
Part number:
MRF6S21140HSR3, MRF6S21140HR3
Manufacturer:
File Size:
876.77 KB
Description:
Rf power fet.
Note:
This datasheet PDF includes multiple part numbers: MRF6S21140HSR3, MRF6S21140HR3.
Please refer to the document for exact specifications by model.
MRF6S21140HSR3, MRF6S21140HR3, RF Power FET
Freescale Semiconductor Technical Data RF Power Field Effect Transistors N Channel Enhancement Mode Lateral MOSFETs Designed for W CDMA base station applications with frequencies from 2110 to 2170 MHz.
Suitable for TDMA, CDMA and multicarrier amplifier applications.
To be used in Class AB for PCN PCS/cellular radio and WLL applications.
Typical 2 carrier W CDMA Performance: VDD = 28 Volts, IDQ = 1200 mA, Pout = 30 Watts Avg., f = 2112.5 M
MRF6S21140HSR3 Features
* Characterized with Series Equivalent Large
* Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 32 VDD Operation
* Integrated ESD Protection
* Optimized for Doherty Applications
* RoHS Compliant
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