MRF6S9060NR1 Datasheet (NXP) - RF Power Field Effect Transistors

MRF6S9060NR1, RF Power Field Effect Transistors

ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data MRF6S9060NR1 replaced by MRFE6S9060NR1.

Refer to Device Migration PCN12895 for more details.

MRF6S9060NBR1 no longer manufactured.

RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz.

The high gain and broadband performance of these devices make them ideal for large - signal, common - source ampl

MRF6S9060NR1 Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters

* Integrated ESD Protection

* 225°C Capable Plastic Package

* N Suffix Indicates Lead - Free Terminations. RoHS Compliant.

* TO - 270 - 2 in Tape and Reel. R1 Suffix = 500 Units per 24