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MRF6S9060 Datasheet - Freescale Semiconductor

MRF6S9060 RF Power Field Effect Transistors

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Freescale Semiconductor Technical Data Document Number: MRF6S9060 Rev. 1, 6/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 28 volt base station equipment. Typical Single - Carrier N - CDMA Performance @ 880 MHz, VDD = .

MRF6S9060 Features

* . Two - Tone Power Gain versus Output Power Figure 6. Third Order Intermodulation Distortion versus Output Power MRF6S9060NR1 MRF6S9060NBR1 MRF6S9060MR1 MRF6S9060MBR1 6 RF Device Data Freescale Semiconductor IRL, INPUT RETURN LOSS (dB) IRL, INPUT RETURN LOSS (dB) TYPICAL CHARACTERISTICS IMD, I

MRF6S9060 Datasheet (533.32 KB)

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Datasheet Details

Part number:

MRF6S9060

Manufacturer:

Freescale Semiconductor

File Size:

533.32 KB

Description:

Rf power field effect transistors.

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MRF6S9060 Power Field Effect Transistors Freescale Semiconductor

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