MRF6S21050LR3_FreescaleSemiconductor.pdf
Datasheet Details
Part number:
MRF6S21050LSR3, MRF6S21050LR3
Manufacturer:
Freescale Semiconductor
File Size:
582.26 KB
Description:
Rf power field effect transistors.
Note:
This datasheet PDF includes multiple part numbers: MRF6S21050LSR3, MRF6S21050LR3.
Please refer to the document for exact specifications by model.
MRF6S21050LSR3, MRF6S21050LR3, RF Power Field Effect Transistors
Bead, Surface Mount 6.8 pF Chip Capacitors 0.01 µF Chip Capacitor (1825) 2.2 µF, 50 V Chip Capacitors (1825) 22 µF, 25 V Tantalum Capacitor 47 µF, 16 V Tantalum Capacitor 10 µF, 50 V Chip Capacitors (2220) 47 µF, 50 V Electrolytic Capacitor 220 µF, 50 V Electrolytic Capacitors 3.3 W, 1/4 W Chip Resi
www.DataSheet4U.com Freescale Semiconductor Technical Data MRF6S21050L Rev.
0, 3/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz.
Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s .
To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications.
Typical 2 - carrier W - CDMA Performance: VDD = 28 Vol
MRF6S21050LSR3 Features
* dc, IDQ = 450 mA, f1 = 2135 MHz f2 = 2145 MHz, 2 x W
* CDMA, 10 MHz @ 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) IM3
* 25
* 30 RF Device Data Freescale Semiconductor DataSheet 4 U .com www.DataSheet4U.com TYPICAL CHARACTERISTICS 109 MTTF FACTOR (HOU
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