MRF6S20010NR1 Datasheet (Freescale Semiconductor) - RF Power Field Effect Transistors

MRF6S20010NR1, RF Power Field Effect Transistors

100 nF Chip Capacitor (1206) 4.7 pF 600B Chip Capacitors 9.1 pF 600B Chip Capacitors 10 μF, 50 V Chip Capacitors 10 μF, 35 V Tantalum Chip Capacitor 1 kΩ Chip Resistor (1206) 10 kΩ Chip Resistor (1206) 10 Ω Chip Resistor (1206) Part Number CDR33BX104AKWS 600B4R7CW 600B9R1CW GRM55DR61H106KA88B T490D1

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF6S20010N Rev.

1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB general purpose applications with frequencies from 1600 to 2200 MHz.

Suitable for analog and digital modulation and multipurpose amplifier applications.

Typical Two - Tone Performance @ 2170 MHz: VDD = 28 Volts, IDQ = 130 mA, Pout = 10 Watts PEP Power Gain 15

MRF6S20010NR1 Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters

* Internally Matched for Ease of Use

* Qualified Up to a Maximum of 32 VDD Operation

* Integrated ESD Protection

* 200°C Capable Plastic Package

* RoHS Compliant

* In Ta