MRF6S20010NR1 - RF Power Field Effect Transistors

Freescale Semiconductor

The MRF6S20010NR1 by Freescale Semiconductor is a RF Power Field Effect Transistors. Below is the official datasheet preview.

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MRF6S20010NR1 RF Power Field Effect Transistors by Freescale Semiconductor - Datasheet Preview — Official preview page of the **MRF6S20010NR1** RF Power Field Effect Transistors datasheet (Freescale Semiconductor).

Datasheet Details

Part number	MRF6S20010NR1
Manufacturer	Freescale Semiconductor
File Size	627.46 KB
Description	RF Power Field Effect Transistors
Datasheet	MRF6S20010NR1_FreescaleSemiconductor.pdf
Additional preview pages of the MRF6S20010NR1 datasheet.

MRF6S20010NR1 Product details

Description

100 nF Chip Capacitor (1206) 4.7 pF 600B Chip Capacitors 9.1 pF 600B Chip Capacitors 10 μF, 50 V Chip Capacitors 10 μF, 35 V Tantalum Chip Capacitor 1 kΩ Chip Resistor (1206) 10 kΩ Chip Resistor (1206) 10 Ω Chip Resistor (1206) Part Number CDR33BX104AKWS 600B4R7CW 600B9R1CW GRM55DR61H106KA88B T490D106K035AS Manufacturer Kemet ATC ATC Murata Kemet MRF6S20010NR1 MRF6S20010GNR1 4 RF Device Data Freescale Semiconductor www.DataSheet4U.com R2 C1 C11 R1 C7 R3 C3 C4 C5 C2 C6 CUT OUT AREA C9 C8

Features

Characterized with Series Equivalent Large - Signal Impedance Parameters.
Internally Matched for Ease of Use.
Qualified Up to a Maximum of 32 VDD Operation.
Integrated ESD Protection.
200°C Capable Plastic Package.
RoHS Compliant.
In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. MRF6S20010NR1 MRF6S20010GNR1 1600 - 2200 MHz, 10 W, 28 V GSM/GSM EDGE SINGLE N - CDMA 2 x W - CDMA.

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Published: Aug 29, 2009 |