MRF6S23100Hxx Datasheet (Freescale Semiconductor) - RF Power Dield Effect Transistors

MRF6S23100Hxx, RF Power Dield Effect Transistors

Part Number 2743019447 100B5R6CP500X C1825C103J1RAC C1825C225J5RAC ECS - T1ED226R T491D476K016AS GRM55DR61H106KA88B NACZF331M63V CRC120610R0F100 Manufacturer Fair - Rite ATC Kemet Kemet Panasonic TE series Kemet Murata Nippon Dale/Vishay MRF6S23100HR3 MRF6S23100HSR3 RF Device Data Freescale Semicon

Freescale Semiconductor Technical Data Document Number: MRF6S23100H Rev.

0, 8/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for 802.16 WiBro and dual mode applications with frequencies from 2300 to 2400 MHz.

Suitable for Class AB feedforward and predistortion systems.

Typical 2 - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1000 mA, Pout = 20 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Pr

MRF6S23100Hxx Features

* ndwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 109 MTTF FACTOR (HOURS x AMPS2) 108 107 106 90 100 110 120 130 140 150 160 170 180 190 200 210 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours x ampe