MRF6S23140HR3 Datasheet (Freescale Semiconductor)

MRF6S23140HR3, RF Power FET

Ferrite Beads, Short 5.6 pF 100B Chip Capacitors 0.01 μF, 100 V Chip Capacitors 2.2 μF, 50 V Chip Capacitors 22 μF, 25 V Tantalum Chip Capacitors 47 μF, 16 V Tantalum Chip Capacitors 10 μF, 50 V Chip Capacitors (2220) 330 μF, 63 V Electrolytic Capacitors 10 Ω, 1/8 W Chip Resistor (1206) Part Number

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF6S23140H Rev.

1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2300 to 2400 MHz.

Suitable for WiMAX, WiBro and multicarrier amplifier applications.

To be used in Class AB and Class C WLL applications.

Typical 2 - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1300 mA, Pout = 28 Watts Avg., Ful

MRF6S23140HR3 Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters

* Internally Matched for Ease of Use

* Qualified Up to a Maximum of 32 VDD Operation

* Integrated ESD Protection

* Lower Thermal Resistance Package

* Designed for Lower Memory E