MRF6S19060NR1, MRF6S19060NBR1 - RF Power Field Effect Transistors

Freescale Semiconductor

The MRF6S19060NR1 by Freescale Semiconductor is a RF Power Field Effect Transistors. Below is the official datasheet preview.

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MRF6S19060NR1 RF Power Field Effect Transistors by Freescale Semiconductor - Datasheet Preview — Official preview page of the **MRF6S19060NR1** RF Power Field Effect Transistors datasheet (Freescale Semiconductor).

Datasheet Details

Part number	MRF6S19060NR1, MRF6S19060NBR1
Manufacturer	Freescale Semiconductor
File Size	636.01 KB
Description	RF Power Field Effect Transistors
Datasheet	MRF6S19060NBR1_FreescaleSemiconductor.pdf
Note	This datasheet PDF includes multiple part numbers: MRF6S19060NR1, MRF6S19060NBR1. Please refer to the document for exact specifications by model.
Additional preview pages of the MRF6S19060NR1 datasheet.

MRF6S19060NR1 Product details

Description

100 nF Chip Capacitor 6.8 pF Chip Capacitors 10 μF, 50 V Chip Capacitors 1 kW Chip Resistor 10 kW Chip Resistor 10 W Chip Resistor Part Number CDR33BX104AKWS 600B6R8BT250XT GRM55DR61H106KA88L Manufacturer Kemet ATC Murata MRF6S19060NR1 MRF6S19060NBR1 RF Device Data Freescale Semiconductor 3 R1 R2 C6 C1 C2 R3 CUT OUT AREA C7 C3 C4 C5 C8 C9 C10 C11 MRF6S19060N/NB Rev.2 Figure 2. MRF6S19060NR1(NBR1) Test Circuit Component Layout MRF6S19060NR1 MRF6S19060NBR1 4 RF Device Data Freescale Semi

Features

Characterized with Series Equivalent Large - Signal Impedance Parameters.
Internally Matched for Ease of Use.
Qualified Up to a Maximum of 32 VDD Operation.
Integrated ESD Protection.
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth.

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Published: Nov 27, 2006 |