MRF6S19060NBR1 - RF Power Field Effect Transistors

Freescale Semiconductor

The MRF6S19060NBR1 by Freescale Semiconductor is a RF Power Field Effect Transistors. Below is the official datasheet preview.

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MRF6S19060NBR1 RF Power Field Effect Transistors by Freescale Semiconductor - Datasheet Preview — Official preview page of the **MRF6S19060NBR1** RF Power Field Effect Transistors datasheet (Freescale Semiconductor).

Datasheet Details

Part number	MRF6S19060NBR1
Manufacturer	Freescale Semiconductor
File Size	636.01 KB
Description	RF Power Field Effect Transistors
Datasheet	MRF6S19060NBR1_FreescaleSemiconductor.pdf
Additional preview pages of the MRF6S19060NBR1 datasheet.

MRF6S19060NBR1 Product details

Description

100 nF Chip Capacitor 6.8 pF Chip Capacitors 10 μF, 50 V Chip Capacitors 1 kW Chip Resistor 10 kW Chip Resistor 10 W Chip Resistor Part Number CDR33BX104AKWS 600B6R8BT250XT GRM55DR61H106KA88L Manufacturer Kemet ATC Murata MRF6S19060NR1 MRF6S19060NBR1 RF Device Data Freescale Semiconductor 3 R1 R2 C6 C1 C2 R3 CUT OUT AREA C7 C3 C4 C5 C8 C9 C10 C11 MRF6S19060N/NB Rev.2 Figure 2. MRF6S19060NR1(NBR1) Test Circuit Component Layout MRF6S19060NR1 MRF6S19060NBR1 4 RF Device Data Freescale Semi

Features

Characterized with Series Equivalent Large - Signal Impedance Parameters.
Internally Matched for Ease of Use.
Qualified Up to a Maximum of 32 VDD Operation.
Integrated ESD Protection.
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth.

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Published: Nov 27, 2006 |